Manpower Details

Designation: ST - VI
Emp ID: 2034
Work Place: Hyderabad Laboratory


  1. Reduction of trace oxygen by hydrogen leaking during selective vaporization to produce ultra-pure cadmium for electronic applications; S.T.Ali, N. R. Munirathnam, Ch.Sudheer,  R.C.Reddy, M.R.P.Reddy, T.L. Prakash; Materials Letters 61 (2007) 1512 – 1516.

  2. A novel in-situ technique of ultra purification of cadmium for electronic applications, S T Ali, R. C. Reddy, N. R. Munirathnam, Ch. Sudheer, G. Anil, T. L. Prakash; Separation and Purification Technology 52 (2006) 288-294.

  3. Purification by Sub-Boiling Distillation and ICP-OES Analysis of High Purity HCl and HNO3 Used for Semiconductor Applications, G. Anil, M.R.P. Reddy, Ch. Sudheer, N.R. Munirathnam and T.L. Prakash, Atomic Spectroscopy, 27(1),  2006, 26-29.

  4. Method of preparation and Characterization of high purity tellurium oxide for optoelectronic and nuclear medicine applications, N.R. Munirathnam, S. Rajesh Kumar, D.S. Prasad, Ch. Sudheer, T.L. Prakash; Metals, Materials and processes, Vol. 17 (2005) No.2, pp. 161-164.

  5. Zone refining of Cadmium and related characterization,  N.R. Munirathnam,  D.S. Prasad, J.V.Rao, Ch. Sudheer and T.L.Prakash, vol. 28 (3), Bulletin of materials science, 2005, 209-212.

  6. Purification of cadmium by vacuum distillation and its analysis, S. T. Ali, N. R. Munirathnam, C. Sudheer, R. C. Reddy and T. L. Prakash, Materials Letters, 58 (2004) p 1638- 1641.

  7. Purification of tellurium to 6N+ by quadruple zone refining,  N.R. Munirathnam, D.S. Prasad, Ch. Sudheer and T.L.Prakash; vol. 254,  Journal of crystal growth, 2003.

  8. Preparation of high purity tellurium by zone refining. N. R. Munirathnam, D.S.Prasad, Ch. Sudheer, A.J.Singh and T.L.Prakash, published in ‘Bulletin of materials science’ vol. 25, No.2, April 2002, pp 79-83.

  9. Tellurium purification: Various techniques and limitations, D. S. Prasad, Ch. Sudheer, N. R. Munirathnam and T.L.Prakash, ‘Bulletin of materials science’ vol. 25, No.6, Nov.,  2002.